Resistive switching in zinc–tin-oxide
نویسندگان
چکیده
Bipolar resistive switching is demonstrated in the amorphous oxide semiconductor zinc–tin-oxide (ZTO). A gradual forming process produces improved switching uniformity. Al/ZTO/Pt crossbar devices show switching ratios greater than 10, long retention times, and good endurance. The resistive switching in these devices is consistent with a combined filamentary/interfacial mechanism. Overall, ZTO shows great potential as a low cost material for embedding memristive memory with thin film transistor logic for large area electronics. 2012 Elsevier Ltd. All rights reserved.
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Bipolar resistive switching in an amorphous zinc tin oxide memristive device
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